Purely decorative image appearing in an article on Semiconductor Industry Monthly entitled X-FAB Unveils Next-Gen SiC Platform for Power MOSFET Designs

X-FAB Unveils Next-Gen SiC Platform for Power MOSFET Designs

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X-FAB Silicon Foundries SE, a leader in analog/mixed-signal and specialty semiconductor manufacturing, has introduced XSICM03, the company’s next-generation XbloX platform for Silicon Carbide (SiC) power MOSFETs. This advanced platform delivers a significant reduction in cell pitch, increasing die per wafer while improving on-state resistance and maintaining robust reliability.


Accelerating SiC MOSFET Development

Purely decorative image appearing in an article on Semiconductor Industry Monthly entitled X-FAB Unveils Next-Gen SiC Platform for Power MOSFET Designs
A Silicon carbide wafer manufactured at X-FAB Texas as part of the XSICM03 platform, enabling high-performance SiC power MOSFETs with improved die density and efficiency. (Photo courtesy of X-FAB)

XbloX is X-FAB’s streamlined technology and business process platform, tailored to accelerate the development of advanced SiC MOSFET technology. The platform integrates qualified SiC process blocks and modules for planar MOSFET production, offering faster prototyping, simplified onboarding, and reduced product development time. By leveraging robust design rules, control plans, and Failure Mode and Effects Analyses (FMEAs), XbloX allows customers to create diverse product portfolios with production timelines shortened by up to nine months compared to traditional methods.  The XSICM03 platform introduces a next-generation circuit structure optimized for pixel reading and sensor drive in the A/D converter. Key enhancements include:

  • Reduced Cell Pitch: Over 25% smaller than previous generations, enabling up to 30% more die per wafer.
  • Enhanced Gate Oxide Reliability: Proven process blocks ensure device robustness.
  • Improved Design Efficiency: An enriched Process Control Monitoring (PCM) library and expanded design support enable faster customer tape-outs.

These advancements make XSICM03 ideally suited for high-performance SiC devices in demanding automotive, industrial, and energy applications.


Meeting Market Demand for High-Performance SiC Devices

“With its streamlined approach, our next-generation process platform addresses the increasing demand for high-performance SiC devices in automotive, industrial, and energy applications,” said Rico Tillner, CEO of X-FAB Texas. “We enable existing and new customers in creating application-optimized product portfolios through accelerated prototyping and design evaluation, significantly reducing time to market.”

The platform’s innovative design improves processing speed while reducing power consumption. It supports the rapid development of SiC planar MOSFETs with improved performance metrics, helping manufacturers meet evolving industry needs.


Availability and Early Access

The XSICM03 platform is now available for early access, giving customers the opportunity to leverage its capabilities for advanced SiC MOSFET development.


About X-FAB Silicon Foundries SE

X-FAB is a global foundry group offering specialty technologies and design IP to enable customers to develop leading semiconductor products. X-FAB operates six wafer fabrication facilities in Malaysia, Germany, France, and the United States, supporting analog/mixed-signal technologies, MEMS/microsystems, and silicon carbide (SiC). The company serves automotive, industrial, and medical markets, employing approximately 4,500 people worldwide. X-FAB has been listed on Euronext Paris since April 2017 (XFAB).

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Source/Photo Credit: X-FAB Silicon Foundries SE


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